Operation for non-volatile storage system with shared bit lines

ABSTRACT

A non-volatile storage system is disclosed that includes pairs of NAND strings (or other groupings of memory cells) in the same block being connected to and sharing a common bit line. To operate the system, two selection lines are used so that the NAND strings (or other groupings of memory cells) sharing a bit line can be selected at the block level. Both selection lines are connected to a selection gate for each of the NAND strings (or other groupings of memory cells) sharing the bit line. One set of embodiments avoid unwanted boosting during read operations by keeping the channels of the memory cells connected to word lines on the drain side of the selected word line biased at a fixed potential.

This application claims priority from U.S. Provisional Application61/561,286, filed on Nov. 18, 2012, incorporated herein by reference inits entirety.

BACKGROUND OF THE INVENTION

1. Field

The present invention relates to non-volatile storage.

2. Description of the Related Art

Semiconductor memory devices have become more popular for use in variouselectronic devices. For example, non-volatile semiconductor memory isused in cellular telephones, digital cameras, personal digitalassistants, mobile computing devices, non-mobile computing devices andother devices. Electrical Erasable Programmable Read Only Memory(EEPROM) and flash memory are among the most popular non-volatilesemiconductor memories.

Both EEPROM and flash memory utilize a floating gate that is positionedabove and insulated from a channel region in a semiconductor substrate.The floating gate is positioned between source and drain regions. Acontrol gate is provided over and insulated from the floating gate. Thethreshold voltage of the transistor is controlled by the amount ofcharge that is retained on the floating gate. That is, the minimumamount of voltage that must be applied to the control gate before thetransistor is turned on to permit conduction between its source anddrain is controlled by the level of charge on the floating gate.

When programming an EEPROM or flash memory device, typically a programvoltage is applied to the control gate and the bit line is grounded.Electrons from the channel are injected into the floating gate. Whenelectrons accumulate in the floating gate, the floating gate becomesnegatively charged and the threshold voltage of the memory cell israised so that the memory cell is in the programmed state. Moreinformation about programming can be found in U.S. Pat. No. 6,859,397,titled “Source Side Self Boosting Technique For Non-Volatile Memory;”and in U.S. Pat. No. 6,917,542, titled “Detecting Over ProgrammedMemory,” both patents are incorporated herein by reference in theirentirety.

Some EEPROM and flash memory devices have a floating gate that is usedto store two ranges of charges and, therefore, the memory cell can beprogrammed/erased between two states: an erased state and a programmedstate that correspond to data “1” and data “0.” Such a device isreferred to as a binary device.

A multi-state flash memory cell is implemented by identifying multiple,distinct allowed threshold voltage ranges. Each distinct thresholdvoltage range corresponds to a predetermined value for the set of databits. The specific relationship between the data programmed into thememory cell and the threshold voltage ranges of the memory cell dependsupon the data encoding scheme adopted for the memory cells. For example,U.S. Pat. No. 6,222,762 and U.S. Patent Application Publication No.2004/0255090, both of which are incorporated herein by reference intheir entirety, describe various data encoding schemes for multi-stateflash memory cells.

To increase the capacity of non-volatile storage systems and/or reducedthe size of the systems, there has been a trend to shrink the areaneeded to implement the memory structure. However, as process geometriesshrink, many design and process challenges are presented.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top view of a NAND string.

FIG. 2 is an equivalent circuit diagram of the NAND string.

FIG. 3 is a block diagram depicting one embodiment of a block in a priorart memory array.

FIG. 4 is a block diagram depicting one embodiment of a portion of amemory array according to the technology described herein.

FIG. 5 is a block diagram depicting one embodiment of a portion of amemory array according to the technology described herein.

FIGS. 6A-6B depict a flow chart describing one embodiment of a portionof a process for fabricating a non-volatile storage system.

FIGS. 7-21 depicts a portion of a non-volatile storage system beingfabricated according to the process of FIGS. 6A-6B.

FIGS. 22A, 22B and 22D-22G depict a top view of the select gates forvarious embodiments of the technology described herein.

FIG. 22C shows a cross section across multiple NAND strings.

FIG. 23 is a block diagram of a non-volatile memory system.

FIG. 24 is a table that shows various voltages used for one embodimentof a process for programming a non-volatile storage system that uses thetechnology described herein.

FIG. 25 is a table that shows various voltages used for one embodimentof a process for programming a non-volatile storage system that uses thetechnology described herein.

FIG. 26 is a table that shows various voltages used for one embodimentof a process for programming a non-volatile storage system that uses thetechnology described herein.

FIG. 27A shows voltage pulses used to program non-volatile storage.

FIG. 27B shows voltage pulses used to program non-volatile storage.

FIG. 28 depicts one embodiment for organizing a memory array andsupporting circuitry.

FIG. 29 depicts one embodiment for organizing a memory array andsupporting circuitry.

FIGS. 30 and 32A are partial schematics of four NAND strings.

FIGS. 31-36 are timing diagrams of various embodiments of readoperations.

DETAILED DESCRIPTION

A non-volatile storage system is disclosed that includes pairs of NANDstrings (or other groupings of memory cells) in the same block beingconnected to and sharing a common bit line. By sharing bit lines, lessbit lines are needed in the storage system. Using less bit lines reducesthe space needed to implement the storage system. To operate the system,two selection lines are used so that the NAND strings (or othergroupings of memory cells) sharing a bit line can be selected at theblock level. Both selection lines are physically connected, but only oneof the selection lines is electrically connected, to a single selectiongate for each of the NAND strings (or other groupings of memory cells)sharing the bit line. In other embodiments, the more than two NANDstrings (or other groupings of connected memory cells) can share a bitline.

One set of embodiments avoids unwanted boosting during read operationsby causing the channels of the memory cells connected to word lines onthe drain side of the selected word line WLn to be at a fixed potential(rather than floating). One example includes causing the channels of thememory cells connected to word lines on the drain side of the selectedword line WLn and on the source side of the selected word line WLn to beat the same fixed potential. In some embodiments, the same fixed channelpotential (for unselected memory cells) will be used during both verifyand read operations

One example (but not the only example) of a non-volatile storage systemthat can be used to implement the technology described herein is a flashmemory system that uses the NAND structure, which includes arrangingmultiple transistors in series, sandwiched between two select gates. Thetransistors in series and the select gates are referred to as a NANDstring. FIG. 1 is a top view showing one prior art NAND string. FIG. 2is an equivalent circuit thereof. The NAND string depicted in FIGS. 1and 2 includes four transistors 100, 102, 104 and 106 in series andsandwiched between a first (drain side) select gate 120 and a second(source side) select gate 122. Select gate 120 connects the NAND stringto a bit line via bit line contact 126. Select gate 122 connects theNAND string to source line 128. Select gate 120 is controlled byapplying the appropriate voltages to select line SGD. Select gate 122 iscontrolled by applying the appropriate voltages to select line SGS. Eachof the transistors 100, 102, 104 and 106 has a control gate and afloating gate. For example, transistor 100 has control gate 100CG andfloating gate 100FG. Transistor 102 includes control gate 102CG and afloating gate 102FG. Transistor 104 includes control gate 104CG andfloating gate 104FG. Transistor 106 includes a control gate 106CG and afloating gate 106FG. Control gate 100CG is connected to word line WL3,control gate 102CG is connected to word line WL2, control gate 104CG isconnected to word line WL1, and control gate 106CG is connected to wordline WL0.

Note that although FIGS. 1 and 2 show four memory cells in the NANDstring, the use of four memory cells is only provided as an example. ANAND string can have less than four memory cells or more than fourmemory cells. For example, some NAND strings will include eight memorycells, 16 memory cells, 32 memory cells, 64 memory cells, 128 memorycells, etc. The discussion herein is not limited to any particularnumber of memory cells in a NAND string. One embodiment uses NANDstrings with 66 memory cells, where 64 memory cells are used to storedata and two of the memory cells are referred to as dummy memory cellsbecause they do not store data.

A typical architecture for a flash memory system using a NAND structurewill include several NAND strings. Each NAND string is connected to thecommon source line by its source select gate controlled by select lineSGS and connected to its associated bit line by its drain select gatecontrolled by select line SGD. The use of the terms connect, connected,and connection in this document can include a direct connection or anindirect connection. Each bit line and the respective NAND string(s)that are connected to that bit line via a bit line contact make up thecolumns of the array of memory cells. Bit lines are shared with multipleNAND strings. Typically, the bit line runs on top of the NAND strings ina direction perpendicular to the word lines and is connected to a senseamplifier.

Relevant examples of NAND type flash memories and their operation areprovided in the following U.S. patents/patent applications, all of whichare incorporated herein by reference: U.S. Pat. No. 5,570,315; U.S. Pat.No. 5,774,397; U.S. Pat. No. 6,046,935; U.S. Pat. No. 6,456,528; andU.S. Pat. Publication No. US2003/0002348. Other types of non-volatilestorage devices, in addition to NAND flash memory, can also be used.

FIG. 3 provides one example of a block of memory cells implemented inprior art memory systems. As can be seen, each NAND string includes manymemory cells. For example FIG. 3 shows each NAND string including Ymemory cells. Each NAND string is connected to one bit line. There isone drain side selection signal SGD and one source side selection signalSGS.

In order to save space on the semiconductor die, it is proposed that twoNAND strings (or other grouping of memory cells) share a single bitline. One proposal for having two NAND strings share a bit line includesusing two select gates at the drain side (same end) of each NAND stringin order to connect or disconnect a NAND string from a bit line. Forexample, looking at FIG. 3, the signal SGD would be replaced by twosignals SGD1 and SGD2. Each NAND string would then have two drain sideselect gates, each connected to a different drain side selection signal.One of the two drain side select gates for each NAND string would be adepletion mode transistor with its threshold voltage lower than 0 volts.One problem with using two select gates on the drain side of each NANDstring is that two drain side select gates (as compared to one drainside select transistor) require more area on the die. Therefore, thetechnology described herein proposes to only use one drain sideselection gate for each NAND string, with two drain side selectionsignals.

FIG. 4 is a portion of a first embodiment of a memory system for which abit line is shared between two NAND strings, where each NAND stringincludes only one drain side selection gate and the block includes twodrain side selection signals. For example, FIG. 4 shows four NANDstrings from a block of NAND strings that includes more than four NANDstrings. Each NAND string includes 64 data memory cells (WL0 . . . WL63)with one or more dummy memory cells on each side of the data memorycells. In other embodiments, more or less than 64 data memory cells canbe included on a NAND string. The block of memory cells will include twodrain side selection signals SGDE and SGDO. FIG. 4 shows two bit lines200 and 202. Bit line 200 is connected to NAND string 210 and NANDstring 212. Bit line 202 is connected to NAND string 214 and NAND string216. The drain side selection signal SGDE is used to select or unselectNAND string 210 and NAND string 214. The drain side signal SGDO is usedto select NAND string 212 and NAND string 216. Each NAND string onlyincludes only one drain side selection gate, implemented as a singletransistor. For example NAND string 210 includes drain side selectiongate 220, NAND string 212 includes drain side selection gate 222, NANDstring 214 includes drain side selection gate 224 and NAND string 216includes drain side selection gate 226. Both selection signals SGDE andSGDO are physically connected to selection gate 220, selection gate 222,selection gate 224 and selection gate 226. Selection signal line SGDE isin electrical communication with selection gate 210 and selection gate214, while being electrically insulated from selection gate 222 andselection gate 226. Similarly, signal line SGDO is in electricalcommunication with selection gate 222 and selection gate 226, andelectrically insulated from selection gate 220 and selection gate 224.Additional implementation details are described below.

FIG. 5 provides another embodiment for sharing a bit line between twoNAND strings. FIG. 5 shows bit lines 230 and 232. Bit line 230 isconnected to and shared by NAND string 234 and NAND string 236. Bit line232 is connected to and shared by NAND string 238 and NAND string 240.FIG. 5 shows selection signal lines SGDE and SGDO physically connectedto the selection gates 250, 252, 254 and 256. Selection signal line SGDEis in electrical communication with selection gate 252 and selectiongate 254, while being electrically insulated from selection gate 250 andselection gate 256. Selection signal line SGDO is in electricalcommunication with selection gate 250 and selection gate 256, whilebeing electrically insulated from selection gate 252 and selection gate254. A difference between the embodiments of FIG. 4 and FIG. 5 is thatthe embodiment of FIG. 4 alternates such that every other NAND stringhas its selection gate electrically in electric communication with thesame selection signal line while the embodiment of FIG. 5 has adjacentpairs of NAND strings in electric communication with the same selectionsignal line.

FIG. 6A and FIG. 6B depict a flowchart which describes a portion of oneembodiment of a process fabricating a non-volatile storage system usingthe technology described herein. For ease of discussion, the process ofFIGS. 6A and 6B will be described in relation to the embodiment of FIG.4. However, it will be clear to one of ordinary skill in the art thatthe process also applies to the embodiment of FIG. 5. FIGS. 7-21 depicta portion of a memory system in various stages of the fabricationprocess of FIGS. 6A-6B and will be referred to during the discussion ofFIGS. 6A-B. FIGS. 7, 8, 9, 11, 12 and 13 depict a cross section takenalong dashed line AA of FIG. 4. FIG. 10 provides a top view. FIGS. 14-21depict a cross section taken along dashed line BB of FIG. 4.

Note that FIGS. 6A and 6B are flowcharts describing only a portion ofthe front end process for manufacturing of non-volatile storage devices,which covers only steps only as far as forming some of the M1 metallayers. These flows do not cover all of the fabrication steps and one ofordinary skill in the art would understand the additional steps needed.There are many ways to manufacture memory according to the presentinvention and, thus, it is contemplated that various methods other thanthat described by FIGS. 6A and 6B can be used. While a flash memory chipwill consist of both peripheral circuitry, which includes a variety oflow, medium and high voltage transistors, and the core memory, theprocess steps of FIGS. 6A and 6B are only intended to describe ingeneral terms a possible process recipe for the fabrication of a portionof the core memory array. Many known photolithography, etch, implant,diffusion, and oxidation steps that are intended for the fabrication ofthe peripheral transistors are omitted.

Step 302 of FIG. 6A includes performing implants and associated annealsof the triple well. The result of step 302 includes a p-substrate, ann-well within the p-substrate and a p-well within the n-well. The n-welldepth is typically much thicker than that of the p-well. The p-substrateis usually the thickest consisting of the majority of the waferthickness. In step 304, a tunnel dielectric layer is deposited on top ofthe p-well. In one embodiment, the tunnel dielectric is made of SiO₂. Instep 306, a floating gate layer is deposited over the dielectric layerusing CVD, PVD, ALD, or another suitable method. In step 308, one ormore hard mask layers (such as SiO₂, SiN, SiO_(x)N_(y) and carbonoriented materials) are deposited using, for example, a CVD or Spin Coatprocess. In one embodiment, two hard masks (HM1 and HM2) are depositedover the floating gate layer. In one example implementation, the twohard mask layers include seven layers: (1) silicon on glass (SOG), (2)an Anti-Reflective Coating (ARC) that is organic below the SOG, (3) ahigh temperature oxide layer below the organic carbon layer, (4) a CVDoriented oxide [e.g., Tetra-ethyl oxide silicate (TEOS) or LP-CVD] layerbelow the a high temperature oxide, (5) a Silicon Nitride layer belowthe CVD oriented oxide layer, (6) another CVD oriented oxide layer belowthe Silicon Nitride layer and (7) another Silicon Nitride layer belowthe second CVD oriented oxide layer. The top four layers (1)-(4)comprise the top hard mask HM1 and the bottom three layers (5)-(7)comprise the bottom, hard mask HM2. In other embodiments, otherstructures for one or more hard masks can also be used. In step 310,photoresist and photolithography are used to form strips of the top hardmask HM1 that was deposited in step 308. FIG. 7 shows the results afterstep 310. As can be seen, the silicon substrate area (Si) is depictedalong with the tunnel dielectric layer TD, floating gate layer FG,bottom hard mask HM2 and the strips of top hard mask HM1. In thisembodiment, the width of the strips of top hard mask HM1 are 2W. Thespacing between top hard masks HM1 is also 2W.

In step 312, a slimming process is performed to reduce the width of thetop hard masks HM1 to a width of W₁. In some embodiments, W₁ is equal toW. In other embodiments, W₁ can be smaller or larger than W. In oneembodiment the slimming process is performed using O₂. In step 314, aconformal layer is deposited on top of the floating gate layer FG andhard mask strips HM1. Based on etch selectivity to hard mask HM1material, appropriate material can be picked for the conformal layer.FIG. 8 shows a portion of the memory system after step 314, depictingthe hard mask HM reduced to a width of W₁ and the conformal layer CLdeposited on top of the hard mask strips HM. At this point, the spacingbetween hard mask strips HM is 2W+(2W−W₁).

In step 316, spacers are created by performing anisotropic etching in avertical direction only. The result of step 316 is depicted in FIG. 9,which shows each hard mask strip HM1 surrounded by spacers SP. Thespacers 316 have a width of W₂. In one embodiment W₂ is wider than W₁,while in another embodiment W₂ is narrower than W₁. When the hard maskstrips HM1 were formed, they were formed in continuous strips across theentire memory array. FIG. 10 is a top view of a portion of a memoryarray showing a plurality of hard mask strips HM1 surrounded by spacersSP. In step 317, horizontal strips of hard mask (mask H) are depositedacross the hard mask strips HM1, as can be seen in FIG. 10. The areaswhere horizontal strips of hard mask (mask H) intersect HM1 are thelocation for the bit line contacts. It is at the bit line contact thattwo adjacent NAND strings will connect to the same bit line.

In step 318 of FIG. 6A, the top hard mask HM1 strips are removed usingthe appropriate wet chemical etch that will remove hard mask strips HM1but not the spacers SP or mask H. Therefore, the portions of HM1 belowmask will not be removed. FIG. 11 depicts the structure after step 318in a location that is not under mask H so that HM1 was removed. In step319, horizontal strips of hard mask (mask H) are removed. FIG. 11Adepicts the structure after step 319 in a location that was under mask Hso that HM1 was not removed. In step 320, a Reactive Ion Etch (RIE) willbe used to etch between spacers, through the bottom hard mask HM2,through the floating gate layer, through the tunnel dielectric layer andinto the silicon to form shallow trench isolation (STI) areas betweenspacers. The STI areas are inside the silicon area Si. In step 322, thespacers are removed using any suitable process known in the art. In step324, the STI areas are filled with oxide. In step 325, the oxide ispolished using a chemical mechanical polish process (CMP). In step 326,the bottom hard mask layer is removed using a wet chemical etch (e.g.,using H₃PO₄). In step 328, the oxide is etched back to remove the oxidedown to a level near the top of the tunnel oxide layer TD. The result ofstep 328 is depicted in FIG. 12, which shows the oxide in the STI up toa level that is a little above tunnel dielectric layer TD. In step 330,the inter-gate dielectric layer is deposited using, for example ALD orCVD process. The inter-gate dielectric layer can be formed by usingmaterials such as SiO₂, ONO, HfO₂, Al₂O₃ or any other high-k material(s)(e.g., not just limited to these), or any combination of such materials.In step 332, a first control gate layer (CGL1) is deposited. In oneembodiment, the floating gate layer FG and the first control gate layerCGL1 are both made of polysilicon. The results of step 332 are depictedin FIG. 13 which shows inter-gate dielectric layer IGD and the firstcontrol gate layer CGL1. After step 332, the process continues at step334 FIG. 6B.

In step 334 of FIG. 6B, a mask is deposited and patterned. The mask isreferred to in the drawings as Mask A. The purpose of the mask is toselectively create shorts (via an aperture or passageway in theinter-gate dielectric IGD) within the drain side select gates of theNAND strings. This mask also creates shorts (via an aperture orpassageway in the inter-gate dielectric IGD) within the source sideselect gates of the NAND strings. These shorts are not created in thememory cells used for storing data. Thus, the mask will have an openingwhere there should be a passageway from control gate layer 1 CGL1 tofloating gate layer FG through inter-gate dielectric IGD. The results ofstep 334 are depicted in FIG. 14 which shows Mask A deposited abovecontrol gate layer 1 CGL1. Note that FIG. 14 is in a differentperspective than FIGS. 7-13. As discussed above, FIG. 14 shows aperspective along line BB of FIG. 4.

In step 336 of FIG. 6B, an etching process will be performed using RIEto etch through CGL1 and IGD, as well as a little bit into floating gatelayer FG. As can be seen from FIG. 15, the etching is performed in thegaps of Mask A and a passageway is created from CGL1 through IGD to FG.In step 338, Mask A is removed using any suitable process known in theart. In step 340, a second control gate layer is deposited. The secondcontrol gate layer is depicted in FIG. 16 as CGL2. Thus, CGL1 and CGL2together form the control gate. When second control gate layer CGL2 isdeposited, it will fill in the passageway created during step 336 sothat the control gate layer (CGL1+CGL2) will be in electricalcommunication (and in electrical contact) with floating gate layer FG.

In one embodiment, FG, CGL1 and CGL2 will be made of the polysilicon.Other materials can also be used. In another embodiment, the threelayers FG, CGL1 and CGL2 can be made of different materials from eachother. When floating gate layer FG, control gate layer 1 CGL1 andcontrol gate layer CGL2 are all made of conductive materials, and thecontrol gate and floating gate are shorted together, the selection gatewill not operate as a non-volatile memory cell.

In step 342, another mask is patterned. This mask is referred to in thedrawings as Mask B. The purpose of Mask B is to define the word lines.FIG. 17 shows the results of step 342 with Mask B deposited over thestructure depicted in FIGS. 14-17. In FIG. 18, an etching process (e.g.RIE) is performed down to the substrate. Therefore, the etching processwill remove portions of CGL1+CGL2, IGD, FG and TD. This step will breakup the strips of active area of a NAND string into separate memory cellsand also will divide CGL1+CGL2 into separate word lines. The controlgate layer for a memory cell is the same material as a portion of theword line. In step 346, Mask B is removed. The results at step 346 aredepicted in FIG. 18. As can be seen, above the silicon Si are two gatestacks. The gate stack on the right includes CGL1+CGL2, IGD, FG and TD.This stack is one of the memory cells (e.g. dummy memory cell or datamemory cell connected to the end word line). The stack on the leftincludes CGL1+CGL2, IGD, FG and TD (with CGL1+CGL2 in communication withFG through a passageway that runs through IGD), and corresponds to theselection gate.

In step 348, BARC (Bottom Anti-Reflective Coating) is added to fill thegaps, and another mask is deposited and patterned. This mask is referredto as Mask C in the drawings. The purpose of this Mask C is to definethe two selection lines SGDO and SGDE. The results of step 348 asdepicted in FIG. 19, which shows Mask C deposited on top of thestructure of FIG. 18.

In step 350, an etching process using RIE will be performed to etchthrough the appropriate portions of CGL1+CGL2 (and BARC) down tointer-gate dielectric layer IGD. In step 352, Mask C and the BARC willbe removed. The results of step 352 are depicted in FIG. 20. As can beseen, the layer of CGL1+CGL2 for the selection gate has been cut intotwo sections: one is a section that corresponds to SGDE and the othersection corresponds to SGDO. In this embodiment, SGDE is an electricalcontact and communication with floating gate layer FG through thepassageway MS. SGDO is electrically insulated from floating gate layerFG by inter-gate dielectric layer IGD.

Looking back at FIG. 4, it's noted that every other NAND string will beconnected electrically to either SGDE or SGDO. Thus, the selectiontransistor of FIG. 20 corresponds to selection transistor 220 of FIG. 4.FIG. 21 shows the structure of selection transistor 222 of FIG. 4. Inthis case, the shape of Mask A (steps 334-338, in FIGS. 14-15) ispatterned so that passageway MS is on the other side of IGD; therefore,SGDO is an electrical connection and communication with floating gatelayer FG while SGDE is electrically insulated from floating gate layerFG by inter-gate dielectric IGD.

In step 354 of FIG. 6B, the source/drain regions of the NAND string arecreated using implantation, as performed and known in the art. Thesource/drain regions can also be a annealed, as known in the art. Instep 356, the bit line contacts are created. In step 358, an insulatoris added between SGDE and SGDO. In one embodiment, the insulator isSiO₂. In another embodiment, SiN, SiO/SiN combination or Air-gapformation can be used. In step 360, the appropriate metal and signallines are added to the memory. In step 362, additional processing isperformed to include the relevant support circuits and the necessarydevices.

As discussed above, the proposed new structure includes neighboring NANDstrings connected to a common bit line. Each NAND string will only haveone drain side selection gate; however, the control gate layer at eachof those drain side select gates are broken up into two regions that areinsulated from each other. Only one of those two regions will be inelectrical communication and in electrical contact with the floatinggate layer via a short (passageway or aperture). Thus, while bothcontrol gate layers (and the control gate layers form part of theselection lines) will be in physical contact with the selectiontransistor, only one of those two control gate regions will be anelectrical contact and in electrical communication with the floatinggate regions FG. By using only one selection transistor, space can besaved. Because less bit lines are used, less bit line contacts can beused which will reduce memory array size.

FIG. 22A provides a top perspective of a portion of the structure ofFIG. 4. For example, FIG. 22A shows the contact for bit line 200 and thecontact for bit line 202, as well as the selection signal lines SGDE andSGDO. FIG. 22A shows the active areas AA for the four NAND strings 210,212, 214 and 216, as well as the floating gate regions FG thatcorrespond to the floating gate regions FG depicted in FIGS. 20 and 21.FIG. 22A also shows the passageway or aperture MS.

FIG. 22B shows another embodiment of the structure of FIG. 4. Here theetch back step 328 is performed around the memory cells but is notperformed or reduced around the drain side select gate such that theoxide that fills the STI region is at a higher level around the drainside select gate transistor area, thereby, reducing the overlay marginsbetween the edge of the passageway MS and the appropriate control gateportion (SGDO or SGDE). That is, the passageway MS could be at the edgeof the control gate region rather than in the middle (as depicted inFIG. 20). Not etching back in the select gate drain regions will helpwith bringing MS to the edge or beyond the edge of the control gate inthe region between SGDE and SGDO, but is not a requirement. Anotheradvantage of not etching back is that not etching back reduces thecapacitance between the signal line and the floating gates of odd SGDtransistors that do not connect to SGDE. The same holds true for SGDOsignal line as well. Another advantage of not etching back is reducingthe capacitance between the SGDO signal line and the SGDE signal line.This is illustrated in FIG. 22C which shows a cross section acrossmultiple NAND strings, with the top cross section showing the case ofthe etch back being performed to the drain side selection gate and thebottom cross section showing the drain side selection gate without theetch back as discussed above.

FIG. 22D depicts another embodiment of the structure of FIG. 4. Whenetching in step 350, it may be possible to etch the signal lines SGDEand SGDO narrower in the case when the etching process can selectivelyetch CGL1 and CGL2, without etching FG. In one example, this can beperformed by having CGL1 and CGL2 comprise a first conductive materialand the FG layer comprise a different conductive material (rather thanhave CGL1, CGL2 and FG be of the same conductive material as describedabove).

FIG. 22E is a top view of a portion of the structure of FIG. 5. FIG. 22Fis a top view of a portion of the structure of FIG. 5 for an embodimentin which the etch back step 328 is not performed or is reduced aroundthe drain side select gate such that the oxide that fills the STI regionis at a higher level around the drain side select gate, thereby,reducing the overlay margins between the edge of the passageway MS andthe appropriate control gate portion (SGDO or SGDE). FIG. 22G is anotherembodiment of the structure of FIG. 5 in which the signal lines SGDE andSGDO are etched narrower in the case when the etching process canselectively etch CGL1 and CGL2, without etching FG.

FIG. 23 illustrates a memory device 710 having read/write circuits forreading and programming a page (or other unit) of memory cells (e.g.,NAND multi-state flash memory) in parallel, including memory cells onNAND strings sharing bit lines as described above. FIG. 23 depicts theSense Blocks 800, Column decoder 742 and READ/WRITE Circuits 730 on bothsides of memory array. With this shared bit line architecture describedherein, since the number of sense blocks is halved, one embodiment caninclude sense blocks, Column decoder and Read/Write circuits on only oneside of memory array. This can lead to further reduction of chip size.Memory device 710 may include one or more memory die or chips 712.Memory die 712 includes an array (two-dimensional or three dimensional)of memory cells 700, control circuitry 720, and read/write circuits 730Aand 730B. In one embodiment, access to the memory array 700 by thevarious peripheral circuits is implemented in a symmetric fashion, onopposite sides of the array, so that the densities of access lines andcircuitry on each side are reduced by half. The read/write circuits 730Aand 730B include multiple sense blocks 800 which allow a page of memorycells to be read or programmed in parallel. The memory array 700 isaddressable by word lines via row decoders 740A and 740B and by bitlines via column decoders 742A and 742B. Word lines and bit lines areexamples of control lines. In a typical embodiment, a controller 744 isincluded in the same memory device 710 (e.g., a removable storage cardor package) as the one or more memory die 712. Commands and data aretransferred between the host and controller 744 via lines 732 andbetween the controller and the one or more memory die 712 via lines 734.

In another embodiment, the system can include sense blocks, Columndecoder and Read/Write circuits on both sides of the array where anarray of N NAND strings will have N/2 bit lines, and N/4 bit lines areconnected to sense blocks, Column decoder and Read/Write circuits at thetop of the array and N/4 bit lines are connected to sense blocks, Columndecoder and Read/Write circuits at the bottom of the array.

Control circuitry 720 cooperates with the read/write circuits 730A and730B to perform memory operations on the memory array 700. The controlcircuitry 720 includes a state machine 722, an on-chip address decoder724 and a power control module 726. The state machine 722 provideschip-level control of memory operations. The on-chip address decoder 724provides an address interface between that used by the host or a memorycontroller to the hardware address used by the decoders 740A, 740B,742A, and 742B. The power control module 726 controls the power andvoltages supplied to the word lines and bit lines during memoryoperations. In one embodiment, power control module 726 includes one ormore charge pumps that can create voltages larger than the supplyvoltage.

In one embodiment, one or any combination of control circuitry 720,power control circuit 726, decoder circuit 724, state machine circuit722, decoder circuit 742A, decoder circuit 742B, decoder circuit 740A,decoder circuit 740B, read/write circuits 730A, read/write circuits730B, and/or controller 744 can be referred to as one or more managingcircuits. The one or more managing circuits perform the processes forerasing, programming and reading.

In one embodiment, an array of memory cells 700 is divided into a largenumber of blocks (e.g., blocks 0-1023, or another amount) of memorycells. As is common for flash EEPROM systems, the block is the unit oferase. That is, each block contains the minimum number of memory cellsthat are erased together. Other units of erase can also be used. A blockcontains a set of NAND strings which are accessed via bit lines and wordlines. Typically, all of the NAND strings in a block share a common setof word lines.

Each block is typically divided into a number of pages. In oneembodiment, a page is a unit of programming. Other units of programmingcan also be used. One or more pages of data are typically stored in onerow of memory cells. For example, one or more pages of data may bestored in memory cells connected to a common word line. Thus, in oneembodiment, the set of memory cells that are connected to a common wordline are programmed simultaneously. A page can store one or moresectors. A sector includes user data and overhead data (also calledsystem data). Overhead data typically includes header information andError Correction Codes (ECC) that have been calculated from the userdata of the sector. The controller (or other component) calculates theECC when data is being programmed into the array, and also checks itwhen data is being read from the array. Alternatively, the ECCs and/orother overhead data are stored in different pages, or even differentblocks, than the user data to which they pertain. A sector of user datais typically 512 bytes, corresponding to the size of a sector inmagnetic disk drives. A large number of pages form a block, anywherefrom 8 pages, for example, up to 32, 64, 128 or more pages. Differentsized blocks, pages and sectors can also be used.

The operation of the structure described above is very similar to theoperation of prior art flash memory. For example when reading memorycells, any suitable processing known in the art can be utilized. Thedeviation from processes known in the art are due to the presence of twoselect gate signals. If reading memory cells on NAND stringselectrically connected to SGDE, then SGDE should be set at a voltagethat turns on the selection gate (should use a voltage that is greaterthan the threshold voltage of selection gate, e.g., three volts) andSGDO should be set at zero volts to cut off those NAND strings that areelectrically connected to SGDO. If reading memory cells connected onNAND strings electrically connected to SGDO, then SGDO receives thevoltage to turn on the selection gate (e.g. three volts) and SGDE is setat zero volts to cut off the other NAND strings. The rest of the signalsoperate the same as is known in the art. When performing an eraseoperation, SGDE, SGDO, SGS, bit lines and source lines are floating. Allword lines in a selected block are grounded. The p-well is provided withan appropriate erase voltage. Other erase schemes in the existing artcan also be used.

FIG. 24 is a table describing one embodiment of a process forprogramming using the structure of FIG. 4 or FIG. 5. FIG. 24 showsvoltages applied during six successive time periods for the example ofprogramming even NAND stings (and not odd NAND strings) with data thatcauses NAND string 210 to be programmed and NAND string 214 to beinhibited from being programmed. FIG. 24 shows voltage values for thebit line 200 (BL200), Bit line 202 (BL202), SGDE, SGDO, the selectedword line WLn (in this example, is WLn=2), unselected word lines (WLn#2)and the source side selection signal SGS. During time period T1, allsignals are at 0 volts. During T2, BL200, BL202, SGDE and SGDO are setat Vdd, while all word lines (WLn=2 and WLn#2) are at Vpass (e.g., ˜7-10volts). Various existing boosting schemes which employ application ofdifferent voltages on unselected word lines can also be used. SGSremains at 0v. All NAND strings are pre-charged and boosted during T2.At time T3, SGDO is changed to 0v, so that odd NAND strings (e.g., NANDstrings 212 and 216) are cut off and will retain the boosting charge inthe channels of the memory cells. At time T4, even NAND strings (e.g.,NAND strings 210 and 214) are selectively unboosted. That is, those NANDstrings that are to receive programming (e.g., 210) lose their boostingcharge in the channel areas by lowering the bit line voltage to 0 volts,while those NAND strings (e.g., 214) that are not to receive programmingwill retain their boosting. In some embodiments, SGDE is lowered fromVdd (e.g., 2.6-3v) to Vsgd (e.g., ˜2.2 v) to reduce boosting leakagefrom drain side select gate. At time T5, the programming voltage Vpgm isapplied to the selected word line WLn=2 as a voltage pulse. At time T6,the voltages are returned to 0v. In some implementations, the process ofFIG. 24 is repeated multiple times during programming of data. In oneembodiment, each iteration of the voltages depicted in FIG. 24 (e.g.,iterations of T1-T6) will include a voltage pulse for Vpgm that ishigher in magnitude than the previous voltage pulse for Vpgm so that theprogramming voltage is applied as a series of stepped pulses. Betweenthe pulses, verify operations are performed.

FIG. 25 is a table describing one embodiment of a process forprogramming using the structure of FIG. 4 or FIG. 5. FIG. 25 showsvoltages applied during six successive time periods for the example ofprogramming even NAND stings (and not odd NAND strings) with data thatcauses NAND string 210 to be programmed and NAND string 214 to beinhibited from being programmed. FIG. 25 shows voltage values for BL200,BL202, SGDE, SGDO, WLn=2, WLN≠2 and SGS. During time period T1, allsignals are at 0 volts. During T2, BL200, BL202, SGDE and SGDO are setat Vdd, while all word lines (WLN=2 and WLN≠2) are at 0 volts. However,some or all word lines can be at a different voltage condition (V₁). SGSremains at 0v. All NAND strings are pre-charged during T2. At time T3,SGDO is changed to 0v and BL200 is changed to 0v, so that odd NANDstrings and even NAND strings that will not be programmed will retainthe pre-charge in the channels of the memory cells. At time T4, Vpass isapplied to all word lines so that all odd word lines and all even wordlines that will not receive programming will be boosted. SGDE is changedto Vsgd. At time T5, the programming voltage Vpgm is applied to theselected word line WLn=2 as a voltage pulse. At time T6, the voltagesare returned to 0v. In some implementations, the process of FIG. 25 isrepeated multiple times during programming of data. Between the pulses(e.g., between iterations of the process of FIG. 25), verify operationsare performed. Boosting later in the process allows for less boostingleakage.

FIG. 26 is a table describing one embodiment of a process forprogramming using the structure of FIG. 4 or FIG. 5. FIG. 26 showsvoltages applied during six successive time periods for the example ofprogramming even NAND stings (and not odd NAND strings) with data thatcauses NAND string 210 to be programmed and NAND string 214 to beinhibited from being programmed. FIG. 26 shows voltage values BL200,BL202, SGDE, SGDO, WLn=2, WLN≠2 and SGS. During time period T1, allsignals are at 0 volts. During T2, BL200, BL202, and SGDO are set atVdd, while all word lines (WLN=2 and WLN≠2) and SGDE are at 0 volts.However, some or all word lines can be at a different voltage condition(V₁). SGS remains at 0v. Odd NAND strings are pre-charged during T2. Attime T3, SGDO and BL200 are changed to 0v and SGDE is raised to Vdd sothat odd NAND strings retain the pre-charge from T2 and even NANDstrings that are to be inhibited are pre-charged in T3. At time T4, allNAND strings received Vpass and SGDE is changed to Vsgd. This allowsboosting on all NAND strings that will not receive programming. At timeT5, the programming voltage Vpgm is applied to the selected word lineWLn=2 as a voltage pulse. At time T6, the voltages are returned to 0v.In some implementations, the process of FIG. 26 is repeated multipletimes during programming of data. Between the pulses (e.g., betweeniterations of the process of FIG. 26), verify operations are performed.

The above embodiments for programming describe various pre-chargingschemes for boosting. One problem that could arise for a shared BL thatis connected to a programmable NAND string and an inhibited NAND stringis that some of the boosted charge in the inhibited NAND string couldleak across the channel of the boosted select gate transistor and intothe drain side of the select gate drain transistor of inhibited NANDstring. To overcome this, it is proposed to perform channel engineeringwhereby the Boron concentration in the channel of the drain sideselection gate is increased towards bit line contact side of the drainselection gate making the channel doping concentration asymmetric.

As mentioned above, the program voltage Vpgm is applied as a series ofpulses. FIGS. 27A and 27B show two different embodiments of programvoltage pulses. For both figures, the shaded pulses program the evenNAND strings while inhibiting the odd NAND strings. The unshaded pulsesprogram the odd NAND strings while inhibiting the even NAND strings.

FIG. 27A depicts an embodiment in which first the even NAND strings areprogrammed (while the odd NAND strings are inhibited from programming)with a set of program pulses have magnitudes that increase for eachsuccessive pulse. After the even NAND strings have completedprogramming, then the odd NAND strings are programmed (while the evenNAND strings are inhibited from programming) with a set of programpulses have magnitudes that increase for each successive pulse. In thisembodiment, data for even NAND strings are first loaded into datalatches and then the even NAND strings are programmed. After the evenNAND strings are programmed, then data for odd NAND strings is loadedinto data latches and then the odd NAND strings are programmed.

FIG. 27B depicts an embodiment where programming of even NAND stringsare interleaved with programming of odd NAND strings. For example, aprogram pulse for even NAND strings at a first magnitude is applied,followed by a program pulse for odd NAND strings at the first magnitudebeing applied, followed by a program pulse for even NAND strings at asecond magnitude being applied (second magnitude is greater than thefirst magnitude by a step size), followed by a program pulse for oddNAND strings at the second magnitude being applied, etc.

The programming schemes of FIGS. 24, 25 and 26 can be used with theprogramming pulses of FIG. 27A or 27B, as well as other sets ofprogramming pulses. In the case of the interleaved programming depictedin FIG. 27B, verify operations can be performed after each pair ofprogramming pulses that are at the same programming voltage. In someembodiments, extra latches may be needed to engage interleavedprogramming. For example, in an embodiment of 2 bits per celltechnology, there may be two extra latches per sense amplifier (i.e. perbit line) just to accommodate the extra bits of data that are associatedwith interleaved programming. If coarse/fine programming is to beutilized also, then an additional third latch may also be required.Thus, in some embodiments of coarse/fine programming with two bits permemory cell, the number of latches per sense amplifier (or per bit line)grows from four to seven. The original set of latches for thenon-interleaved case can be denoted as: 1) sense amplifier latch, 2)ADL, 3) BDL, and 4) XDL, where ADL and BDL are data latches for amulti-level (multi-state) information store and XDL is a data latch thatis an out buffer or sense amplifier status signal store. The latchesneeded for interleaved programming can be denoted as: 1) sense amplatch, 2) ADLE, 3) ADLO, 4) BDLE, 5) BDLO, 6) XDLE, and 7) XDLO, wherethe E and the O at the end of the latch name designate even or odd.Extra latches add to the die size and cost; however, they help improveprogram speed and help dissipate floating gate to floating gateparasitic capacitance effects. An alternative to adding extra set oflatches is to repeatedly transfer data from the controller for even andodd bit lines after each program pulse. This is currently very expensivein terms of both the time and energy required for the repeated transferof same data after each program pulse. If the energy and performancecosts associated with repeated data transfers come down in the futurethrough the introductions of new data I/O schemes, then this method maybecome viable.

In yet another embodiment, if and when the data to be written isavailable on chip (i.e. residing in binary cache pages) then it may bepossible to reduce the number of additional latches from three to one inthe example discussed above. This would be made possible by repeatedlyre-reading the data of even and odd cells from the binary cache andplacing the data onto the latches at a rate of once per program pulse.In such an embodiment the number of latches for two bits per memory celltechnology may increase from four to five, where the extra latch holdsthe coarse/fine programming information for interleaved programming.

FIG. 28 depicts a memory architecture where the sense amplifiers areplaced in the middle of the memory array. For example, FIG. 28 shows thesense amplifiers in middle region 800 of memory array 802. Contact padsand peripheral circuits are depicted in region 804 and row decoders arepositioned in areas 806. In one embodiment, half of the sense amplifiersare connected to a plane of blocks of memory cells above and the otherhalf of the sense amplifiers are connected to a plane of blocks ofmemory cells below the sense amplifiers. The embodiment of FIG. 28allows for bit line lengths to be decreased by a factor of two. As aresult, bit line resistance and capacitance is reduced by factor of two.The bit line RC time constant is reduced by a factor of 4. Theembodiment of FIG. 28 has the additional advantage of further reducingthe bit line RC time constant by virtue of doubling bit line pitch.

The embodiments described above have one bit line for every pair of NANDstrings. This doubles the pitch of the bit lines allowing for furtherreduction of bit line capacitance, resistance, and/or both, depending onnew width and spacing of bit lines. With bit line time constants reducedsubstantially, further performance gain can be achieved by addinganother shared row decoder to make word lines half the usual length and,thereby, reducing word line time constants also by a factor of 4. Suchan embodiment is depicted in FIG. 29, which shows sense amplifiers inmiddle region 850 of memory array 852, contact pads and peripheralcircuits are depicted in region 854, and row decoders are positioned inareas 856, 858 and 860. Areas 856 and 860 are on the side of the memoryarray. Area 858 is in the center of the memory array. This shared rowdecoder will add to die size, but depending on the application, thisadded cost may be warranted by the increase in performance.

With no lock out mode (a memory cell locked out from furtherprogramming) and faster bit lines, the shared bit line architecture modeprovides maximum advantage in terms of energy savings. No lock outallows all bit lines to be charged up simultaneously and also dischargedsimultaneously. This has a very large impact in saving energy needed tocharge and discharge bit lines. The advantage of no lock out or of fewerlock out operations than is typically performed are explained in U.S.Pat. No. 7,489,553 titled “Non-Volatile Memory With Improved SensingHaving Bit-Line Lockout Control;” U.S. Pat. No. 7,492,640 titled“Sensing With Bit-Line Lockout Control In Non-Volatile Memory;” U.S.Pat. No. 7,808,832 titled “Non-Volatile Memory With Improved SensingHaving Bit-Line Lockout Control,” which are all incorporated herein byreference in their entirety.

In the above-described proposals, the drain side selection gate is splitinto EVEN and ODD on the drain side. However, the dual selection signalarchitecture can be used on the source side too (or instead of on thedrain side). In such an embodiment, there would be two source sideselection signals SGSE and SGSO. SGDE and SGSE are connected to evenNAND strings. SGDO and SGSO are connected to odd NAND Strings. Onepotential benefit is that in the embodiments above, the systems readsthe even NAND strings first and then the odd NAND strings (or viceversa). When even NAND strings are being read, due to high voltage onunselected WLs (Vread), the memory cells on odd NAND string can getdisturbed due to undesired electron injection/ejection. When odd NANDstrings are being read, due to high voltage on unselected WLs (Vread),the threshold voltage of memory cells on even NAND string can shift dueto undesired electron injection/ejection. By using the split source sideselection gate, this undesirable shift of threshold voltage of memorycells on NAND strings not being read can be lowered. When the systemreads even NAND strings, SGDE and SGSE are ON (Vsg). But the SGDO andSGSO are off (0V). When the word lines are driven to VREAD while readingeven NAND strings, it will boost the channel of odd NAND strings. As aresult, the vertical field seen by odd NAND strings is lowered andundesirable shift of threshold voltage of memory cells on odd NANDstrings while reading even NAND strings is mitigated.

FIG. 30 depicts a portion of an example memory array for which a bitline is shared between two NAND strings, where each NAND string includesonly one drain side selection gate and the block includes two drain sideselection signals. More specifically, FIG. 30 shows portions of fourNAND strings. Two bit lines 900 and 902 are depicted. Bit line 900 isconnected to NAND string 904 via selection gate 920 and NAND string 906via selection gate 922. Bit line 902 is connected to NAND string 908 viaselection gate 924 and connected to NAND string 910 via selection gate926. Selection gates 920, 922, 924 and 926 are the same structure andoperate like the selection gates described above (e.g., with respect toFIGS. 4-22G). The selected word line WLn is connected to memory cells930 on NAND string 904, 932 on NAND string 906, 934 on NAND string 908and 936 on NAND string 910.

FIG. 31 is a timing diagram describing one embodiment of a read (orsensing) process for the structure of FIG. 30. The process described inFIG. 31 can be used to read data or verify programming. In thisembodiment, one half of the NAND strings are read at a given time whilethe other half are off. FIG. 30 shows a scenario where even NAND stringsare being sensed/read and odd NAND strings are unselected. FIG. 31 showsthe behavior of SGDE, SGDO, SGS, WL unselected (ie all word lines otherthan WLn), WLn (the selected word line), Vbl (the voltage on the bitline), and SL (the voltage on the source line). At time t0, all of theabove-listed signals are at 0. At time t0, SGDE and SGS are ramped up toVsg (e.g., ˜2.2 volts). At time t1 WL unselected is raised to Vread(e.g., ˜7-10 volts), Vbl is raised to Vcelsrc (e.g., ˜1v), SGDO israised to Vcelsrc (or kept at 0v) and SL is raised to Vcelsrc. Theabove-listed signals raised at t1 reach steady state by t2. Also at timet1, the selected word line experiences a small spike in voltage due tocoupling from neighboring word lines. Between t2 and t3, the appropriateread compare voltage is applied to the selected word line WLn. Forexample, if the read operation is testing whether a binary memory cellis programmed or erased, then WLn=0v. If the read operation is testingwhether a multi-state memory cell is programmed to State X then WLn=Yvolts, where Y volts is the read compare voltage between State X andState X−1. The read compare voltage driven on WLn is referred to in FIG.31 as Vcg. In some embodiments, the read compare voltage driven on theselected word line during a read operation is referred to as Vcgr. Insome embodiments, the read compare voltage driven on the selected wordline during a verify operation is referred to as Vcgv. At time t3, thebit line is raised to a bit line voltage Vbl (e.g., 1.2 v) suitable forthe sensing operation. After t4, the selected memory cells are sensed.

FIG. 30 shows the voltages on the various signals after t4, during thesensing operation, and illustrates two issues: (1) some unselectedmemory cells may experience unwanted boosting in their channel and (2)some memory cells will experience conditions during a read operationthat are different than the conditions during the relevant verifyoperation (which can lead to a read error).

In the example illustrated, NAND string 904 and NAND string 910 areselected (ie selectively electrically connected to bit lines 900 and902) and NAND string 906 and NAND string 908 are unselected (ieselectively electrically isolated from bit lines 900 and 902). In thisconfiguration, memory cells 930 and 936 can be read. All other memorycells depicted in FIG. 30 are not selected. WLn is receiving Vcg tosense the state of memory cells 930 and 936. However, memory cells 932and 934 are also connected to WLn. For example purposes, assume thatmemory cell 932 is erased and has a threshold voltage (Vt) that is lessthan 0; therefore, memory cell 932 turns on in response to Vcg. Forexample purposes, assume that memory cell 934 is programmed and has athreshold voltage (Vt) that is greater than 0; therefore, memory cell934 does not turn on in response to Vcg and remains off. Since memorycell 932 turns on in response to Vcg, the entire channel along NANDstring 906 is biased at Vch=Vcelsrc based on the voltage on the sourceline SL (see dashed line 940). Memory cell 930 sees its neighboringchannel along NAND string 906 at Vch=Vcelsrc. Since memory cell 934 isoff, the channel above WLn along NAND string 908 is not connected to anyvoltage (ie floating) and hence it boosts when the word lines are rampedfrom 0 to Vread (see dashed line 944). So the voltage in the channelabove WLn is at Vboost (which will be a function of Vread and the datapattern in the memory cells connected to word lines on the drain side ofWLn). However, the channel below WLn along NAND string 908 is biased atVcelsrc (see dashed line 942). Memory cell 936 sees neighboring channelalong NAND string 908 at Vch≠Vcelsrc.

Consider the channel along NAND string 908. Across memory cell 934, theVds is large (a function of Vboost and Vcelsrc) and Vgd is highlynegative. This may cause GIDL (Gate Induced Drain Leakage) at the WLndrain junction and the resulting electrons may get injected into one ofthe floating gates on memory cells connected to word lines on the drainside of WLn (e.g., WLn+1 or WLn+2). This GIDL based injection ofelectrons will cause an unwanted increase of the threshold voltage ofmemory cells connected to word lines on the drain side of WLn, which maylead to an error.

Additionally, there is a mismatch between verify and read operations.The sensed threshold voltage of memory cells 930 and 936 depends onadjacent channel potential. The channel potential of the unselected NANDstring depends on the Vt (threshold voltage) of the memory cellconnected to WLn and the Vcg voltage on WLn. Since the Vt of the WLnmemory cell may vary between verify operation and read operations, thechannel voltage may vary (as discussed above) and the adjacent channelpotential seen by memory cells 930 and 936 may be different betweenverify and read operations. This means that the Vt during the readoperation of memory cells 930 and 936 maybe different from the Vt duringthe verify operation, leading to increased number of error bits.

In summary, word lines on the drain side of WLn may be receive unwantedboosting which may cause GIDL at the WLn drain, and the channel voltagein the unselected bit lines differs between verify and read operations.One proposed set of solutions avoid unwanted boosting by keeping thechannels of the memory cells connected to word lines on the drain sideof WLn biased at a fixed potential, such as Vcelsrc (through SGD orthrough SL via WLn), or another fixed potential, and maintain the samechannel potential of VCELSRC along all unselected channels during bothverify and read operations.

FIG. 32 is a timing diagram describing a first embodiment for readingdata in a manner that overcomes the issues raised above. In thisembodiment, the unselected NAND string channel is charged to Vcelsrc (oranother fixed potential) from both source side and drain side;therefore, there is no unwanted boosting of the channel above Vcelsrc.FIG. 32 shows the behavior of SGDE, SGDO, SGS, WL unselected, WLn, Vbl,and SL. All signals start at 0v. At time t0, SGDE is raised to Vsg, SGDOis raised to Vsg and SGS is raised to Vsg. At time t1, SGDE is raised toVsg+Vcelsrc+A (where A=1-2v) SGDE is raised to Vsg+Vcelsrc+Δ, ratherthan Vsg+Vcelsrc, to minimize settling time of SGDE due to coupling fromSGDO. Also at time t1, SGDO is raised to Vsg+Vcelsrc, SGS is raised toVsg+Vcelsrc, the unselected word lines (WL unselected) are raised toVread (the unselected voltage), the bit line voltage Vbl is raised toVcelsrc and the source line SL is raised to Vcelsrc. The selected wordline WLn experiences a small spike due to coupling from neighboring wordlines. At time t3, SGDO is lowered to 0 volts or Vcelsrc to disconnectthe odd NAND strings and SGDE is lowered to Vsg+Vcelsrc (or Vsg) tocontinue to electrically select the even NAND strings. Also at t3, Vcgor 0 volts (depending on the sensing operation) is driven on theselected word line WLn. The bit line voltage is raised to Vbl at t4, andsensing begins after t5.

As can be seen from FIG. 32, SGS, SGDE and SGDO are turned ON and VBLand SL are charged to Vcelsrc at time t1. When unselected word lines (WLunselected) are ramped to Vread, no boosting (above Vcelsrc) can occuron odd NAND strings (e.g., 906 and 908) because SGDO is on, thereby,providing a path from the NAND string to the bit line. Thus, the channelregions of odd NAND strings (both above and below WLn) are charged toand maintained at Vcelsrc (rather than float). In the embodiment of FIG.32, the channels on the drain side of the selected word line are at afixed potential based on the bit line voltage and the channels on thesource side of the selected word line are at a fixed potential based onthe source line voltage.

FIG. 32A shows the four NAND strings of FIG. 30 during the sensing ofFIG. 32. Because the boosting above the fixed potential in the odd NANDstrings is prevented, the channel below WLn and above WLn arepre-charged before sensing to Vcelsrc and maintained at Vcelsrc duringthe sensing. Vcelsrc is one example of a fixed potential that thechannels are maintained at. Other fixed potentials can also be used. Insome embodiments, the channels on the drain side of the selected wordline are pre-charged to and maintained at the same fixed potential asthe channels on the source side of the selected word line. In otherembodiments, the channels on the drain side of the selected word lineare pre-charged to and maintained at a different fixed potential as thechannels on the source side of the selected word line. In otherembodiments, the channels of the memory cells in the unselected NANDstrings can be maintained at multiple different fixed potentials.

FIG. 33 is a timing diagram describing a second embodiment for readingdata. In this embodiment, the unselected NAND string channel is chargedto Vcelsrc (or another fixed potential) from both source side and drainside. FIG. 33 shows the behavior of SGDE, SGDO, SGS, WL unselected, WLn,Vbl, and SL. All signals start at 0v. The behavior of the signals in theembodiment of FIG. 33 is similar to FIG. 32, except for WLn. In theembodiment of FIG. 33, WLn is raised to Vread at t1 concurrently withraising the unselected word lines (WL unselected) to Vread. WLn islowered from Vread to 0v at t3 concurrently with lowering the SGDO toVcelsrc (or 0v). After t4, WLn can remain at 0v or rise to Vcg.

As can be seen from FIG. 33, SGS, SGDE and SGDO are turned ON, and VBLand SL are charged to Vcelsrc at time t1. When the word lines (WLunselected) are ramped to Vread, no boosting (above Vcelsrc) can occuron odd NAND strings (e.g., 906 and 908) because SGDO is on, thereby,providing a path from the NAND string to the bit line. Thus, the channelregions of odd NAND strings (both above and below WLn) are charged toVcelsrc. Similar to as depicted in FIG. 32A, the channel below WLn andabove WLn is at Vcelsrc.

FIG. 34 is a timing diagram describing a third embodiment for readingdata in which the entire channel of the unselected NAND string ischarged from only the source side (ie from SL). To accomplish this, oneexample implementation drives all word lines to Vread so that the entirechannel is in communication with the source signal SL.

FIG. 34 shows the behavior of SGDE, SGDO, SGS, WL unselected, WLn, Vbl,and SL. All signals start at 0v. At time t0 of FIG. 34, SGS is raised toVsg. At time t1, SGDE is raised to Vcelsrc, SGDO is raised to Vcelsrc(or 0v), SGS is raised to Vsg_Vcelsrc, the selected word line WLn andthe unselected word lines (WL unselected) are concurrently raised toVread, the bit line BL is raised to Vcelsrc and the source line SL israised to Vcelsrc. At time t3, SGDE is raised to Vsg+Vcelsrc toelectrically connect even NAND strings, the bit line voltage is raisedto Vbl, and WLn is lowered to 0v. At t4, Vcg or 0v are driven on theselected word line WLn. Sensing begins after t5. FIG. 34 also shows SGDOhaving a spike at t3 due to coupling from raising SGDE.

The embodiment of FIG. 34 includes applying Vcelsrc only from SGS sideand using the selected word line WLn ramp from 0v to VREAD. Only SGS isturned on at t1, and VBL and SL both are charged to Vcelsrc. Since allWLs are ramped to Vread, all the NAND strings are fully on and all thechannels are at Vcelsrc; therefore, there is no boosting (as the channelis at a fixed potential rather than floating). There is also no mismatchbetween verify and read operations as the entire channel area of all oddNAND strings will be at Vcelsrc. Only SGDE is turned on at t3. Note thatsince SGDO was off, the system can start ramping the bit line to Vbl att3.

FIG. 35 is a timing diagram describing a fourth embodiment for readingdata in which the entire channel of the unselected NAND string ischarged from only the source side. To accomplish this, one exampleimplementation drives all word lines to Vread so that the entire channelis in communication with the source signal SL.

FIG. 35 shows the behavior of SGDE, SGDO, SGS, WL unselected, WLn, Vbl,and SL. All signals start at 0v. At time t0 of FIG. 35, SGS and SGDE areraised to Vsg. FIG. 35 also shows SGDO having a spike at t0 due tocoupling from raising SGDE. At time t1, the unselected word lines (WLunselected) and the selected word line WLn are raised to Vread.Additionally, SGS and SGDE are raised to Vsg+Vcelsrc, SGDO is raised toVcelsrc (or 0v) the bit line is raised to Vcelsrc, the source line SL israised to Vcelsrc. At time t3, the bit line voltage is raised to Vbl andthe selected word line WLn is lowered to 0v. Just after t4, Vcg or 0v isdriven on the selected word line WLn. Sensing begins after t5. Since allWLs are ramped to Vread, all the NAND strings are fully on and the allthe channels are at Vcelsrc; therefore, there is no boosting (as thechannel is at a fixed potential rather than floating). There is also nomismatch between verify and read operations as the entire channel areaof all odd NAND strings will be at Vcelsrc.

FIG. 36 is a timing diagram describing a fifth embodiment for readingdata in which the entire channel of the unselected NAND string ischarged from only the source side. To accomplish this, one exampleimplementation drives all word lines to Vread so that the entire channelis in communication with the source signal SL.

FIG. 36 shows the behavior of SGDE, SGDO, SGS, WL unselected, WLn, Vbl,and SL. All signals start at 0v. At time t0, SGS is raised to Vsg, SGDEis raised to Vcelsrc and SGDO is raised to Vcelsrc (or 0v). At t1, theunselected word lines (WL unselected) and the selected word line WLn areraised to Vread, the bit line is raised to Vbl, SGS is raised toVsg+Vcelsrc, and the source line SL is raised to Vcelsrc. At time t3,SGDE is raised to VSG+Vcelsrc to connect even NAND strings, and theselected word line is lowered to 0v. FIG. 36 also shows SGDO having aspike at t3 due to coupling from raising SGDE. At t4, Vcg or 0v isdriven on the selected word line WLn. Sensing begins after t5. In theembodiments of FIGS. 34-36, the channels on the drain side of theselected word line and the channels on the source side of the selectedword line are at a fixed potential based on the source line voltage.Since all WLs are ramped to Vread, all the NAND strings are fully on andthe all the channels are at Vcelsrc; therefore, there is no boosting (asthe channel is at a fixed potential rather than floating). There is alsono mismatch between verify and read operations as the entire channelarea of all odd NAND strings will be at Vcelsrc.

The processes depicted in FIGS. 32-36 describe one sensing operation. Aread or verify process may include one or multiple sensing operations.For example, reading binary flash memory may only require one sensingoperation at Vcg=0v. However, reading multistate flash memory mayrequire performing sensing operations at multiple read compare pointsbetween data states in order to determine which data state the memorycell is in, with each data state representing multiple bits of data. Insome embodiments, when the system performs multiple reads/verifyoperations sequentially, SGDE/O need to be set only before the 1^(st)read in the read sequence.

Note that the above embodiments describe structures with two NANDstrings sharing a common bit line. In other embodiments, more than twoNAND strings can share a common bit line using the teachings above.

One embodiment includes electrically selecting one group of non-volatilestorage elements for each bit line of a plurality of bit lines in asystem that includes multiple groups of non-volatile storage elements ina common block being connected to each bit line of the plurality of bitlines, each group of non-volatile storage elements comprises multipleconnected non-volatile storage elements; applying an unselected voltageto unselected word lines; maintaining, at a first fixed potential,channels of non-volatile storage elements that are connected to wordlines on a drain side of a selected word line and that are in unselectedgroups of non-volatile storage elements; and applying a read comparevoltage to the selected word line and sensing non-volatile storageelements connected to the selected word line and that are in selectedgroups of non-volatile storage elements.

In some embodiments, the maintaining further includes maintaining, at asecond fixed potential, channels of non-volatile storage elements thatare connected to word lines on a source side of the selected word lineand that are in the unselected groups of non-volatile storage elements.The first fixed potential can be the same as or different than thesecond fixed potential.

In some embodiments, each group of non-volatile storage elements isconnected to one source side select signal and two drain side selectsignals. In various alternatives: the maintaining includes turning onthe two drain side select signals to allow the first fixed potential tobe pre-charged from a respective bit line, the maintaining includesturning off the two drain side select signals and turning on the sourceside select signal; and the maintaining includes turning on only one ofthe two drain side select signals and turning on the source side selectsignal.

Some examples include applying the first fixed potential from arespective bit line and/or applying the first fixed potential from acommon source line for the groups.

The non-volatile storage elements can be any suitable type ofnon-volatile storage element. In one suitable example, the groups ofnon-volatile storage elements are NAND strings.

In one example, the applying the unselected voltage to unselected wordlines and the maintaining are performed without boosting above the firstfixed potential the channels of non-volatile storage elements that areconnected to word lines on a drain side of a selected word line and thatare in unselected groups of non-volatile storage elements.

One embodiment of a non-volatile storage apparatus comprises a pluralityof non-volatile storage elements arranged into groups of connectednon-volatile storage elements; a plurality of bit lines, each of the bitlines are connected to multiple groups; a plurality of word lines, eachof the word lines are connected to multiple groups; and one or moremanaging circuits in communication with the non-volatile storageelements via the bit lines and word lines. The one or more managingcircuits select one group for each bit line. The one or more managingcircuits apply an unselected voltage to unselected word lines. The oneor more managing circuits maintain at a first fixed potential channelsof non-volatile storage elements that are connected to word lines on adrain side of a selected word line and that are in unselected groups.The one or more managing circuits apply a read compare voltage to theselected word line and sense non-volatile storage elements connected tothe selected word line that are in selected groups.

One embodiment includes electrically selecting one NAND string for eachof a plurality of bit lines of a system where multiple NAND strings in acommon block are connected to each bit line of the plurality of bitlines, the NAND strings have channels; applying an unselected voltage tounselected word lines; maintaining the channels of memory cellsconnected to word lines on both sides of a selected word line at one ormore fixed potentials; and applying a read compare voltage to a selectedword line and sensing non-volatile storage elements connected to theselected word line.

One embodiment includes electrically selecting one NAND string for eachof a plurality of bit lines of a system where multiple NAND strings in acommon block are connected to each bit line of the plurality of bitlines, the NAND strings have channels; applying an unselected voltage tounselected word lines; applying a source voltage via a common sourceconnection for NAND strings of the common block to pre-charge to thesource voltage source sides of the channels of unselected NAND strings;applying bit line voltages to the plurality of bit lines to pre-chargeto the bit line voltages drain sides of the channels of unselected NANDstrings; and applying a read compare voltage to a selected word line andsensing non-volatile storage elements connected to the selected wordline.

One embodiment includes electrically selecting one NAND string for eachof a plurality of bit lines of a system where multiple NAND strings in acommon block are connected to each bit line of the plurality of bitlines, the NAND strings have channels; applying a read pass voltage tounselected word lines; applying a source voltage via a common sourceconnection for NAND strings of the common block to pre-charge to thesource voltage both sides of the channels, with respect to a selectedword line, of unselected NAND strings; and applying a read comparevoltage to a selected word line and sensing non-volatile storageelements connected to the selected word line.

The foregoing detailed description of the invention has been presentedfor purposes of illustration and description. It is not intended to beexhaustive or to limit the invention to the precise form disclosed. Manymodifications and variations are possible in light of the aboveteaching. The described embodiments were chosen in order to best explainthe principles of the invention and its practical application to therebyenable others skilled in the art to best utilize the invention invarious embodiments and with various modifications as are suited to theparticular use contemplated. It is intended that the scope of theinvention be defined by the claims appended hereto.

We claim:
 1. A method of reading non-volatile storage, comprising:electrically selecting one group of non-volatile storage elements foreach bit line of a plurality of bit lines in a system that includesmultiple groups of non-volatile storage elements in a common block beingconnected to each bit line of the plurality of bit lines, each group ofnon-volatile storage elements comprises multiple connected non-volatilestorage elements and a drain side select gate; applying an unselectedvoltage to unselected word lines; using drain side select gates to applya first voltage from bit lines to channels of non-volatile storageelements that are connected to word lines on a drain side of a selectedword line and that are in a plurality of unselected groups ofnon-volatile storage elements; and applying a read compare voltage tothe selected word line and sensing non-volatile storage elements thatare connected to the selected word line and that are in selected groupsof non-volatile storage elements.
 2. The method of claim 1, furthercomprising, applying a second voltage to channels of non-volatilestorage elements that are connected to word lines on a source side ofthe selected word line and that are in the plurality of unselectedgroups of non-volatile storage elements.
 3. The method of claim 2,wherein: the first voltage is the same as the second voltage.
 4. Themethod of claim 2, further comprising: applying the unselected voltageto the selected word line while applying the unselected voltage to theunselected word lines.
 5. The method of claim 1, wherein: each group ofnon-volatile storage elements is connected to one source side selectsignal and two drain side select signals; and the applying the firstvoltage includes turning on the two drain side select signals to allowthe first voltage to be pre-charged from a respective bit line.
 6. Themethod of claim 1, further comprising: applying the first voltage from acommon source line for the groups, each group of non-volatile storageelements is connected to one source side select signal and two drainside select signals, the applying the first voltage includes turning ononly one of the two drain side select signals and turning on the sourceside select signal.
 7. The method of claim 1, wherein: the groups ofnon-volatile storage elements are NAND strings.
 8. The method of claim1, wherein: the applying the unselected voltage to unselected word linesand the applying the first voltage are performed without boosting thechannels of non-volatile storage elements that are connected to wordlines on the drain side of the selected word line and that are inunselected groups of non-volatile storage elements.
 9. The method ofclaim 1, wherein: the read compare voltage is less than thresholdvoltages of non-volatile storage elements that are connected to theselected word line and that are in the plurality of unselected groups ofconnected non-volatile storage elements.
 10. The method of claim 1,wherein: the multiple groups of non-volatile storage elements arearranged in a three dimensional memory structure.
 11. A method ofreading non-volatile storage, comprising: electrically selecting onegroup of non-volatile storage elements for each bit line of a pluralityof bit lines in a system that includes multiple groups of non-volatilestorage elements in a common block being connected to each bit line ofthe plurality of bit lines, each group of non-volatile storage elementscomprises multiple connected non-volatile storage elements, each groupof non-volatile storage elements is connected to one source side selectsignal and two drain side select signals; applying an unselected voltageto unselected word lines; applying a first voltage to channels ofnon-volatile storage elements that are connected to word lines on adrain side of a selected word line and that are in a plurality ofunselected groups of non-volatile storage elements, the applying thefirst voltage includes applying the first voltage from a common sourceline for the groups, the applying the first voltage includes turning offthe two drain side select signals and turning on the source side selectsignal; and applying a read compare voltage to the selected word lineand sensing non-volatile storage elements that are connected to theselected word line and that are in selected groups of non-volatilestorage elements.
 12. A non-volatile storage apparatus, comprising: aplurality of non-volatile storage elements arranged into groups ofconnected non-volatile storage elements, each of the groups include adrain side select gate; a plurality of bit lines, each of the bit linesare connected to multiple groups in a same block; a plurality of wordlines, each of the word lines are connected to multiple groups; and oneor more managing circuits in communication with the non-volatile storageelements via the bit lines and word lines, the one or more managingcircuits are configured to select one group of connected non-volatilestorage elements for each bit line, the one or more managing circuitsare configured to apply an unselected voltage to unselected word linesconnected to the groups of connected non-volatile storage elements, theone or more managing circuits are configured to apply a first voltagefrom bit lines through drain select gates to a set of channels ofnon-volatile storage elements that are connected to word lines on adrain side of a selected word line and that are in a plurality ofunselected groups of connected non-volatile storage elements, the one ormore managing circuits are configured to apply a read compare voltage tothe selected word line and sense non-volatile storage elements connectedto the selected word line and that are in selected groups of connectednon-volatile storage elements.
 13. The apparatus of claim 12, wherein:the one or more managing circuits maintain, at a fixed potential,channels of non-volatile storage elements that are connected to wordlines on a source side of the selected word line and that are in theunselected groups of non-volatile storage elements.
 14. The apparatus ofclaim 12, further comprising: one source side select signal and twodrain side select signals connected to the groups, the one or moremanaging circuits turn on only one of the two drain side select signalsand turn on the source side select signal.
 15. The non-volatile storageapparatus of claim 12, wherein: the groups of connected non-volatilestorage elements are NAND strings.
 16. The non-volatile storageapparatus of claim 12, wherein: plurality of non-volatile storageelements arranged in a three dimensional memory structure.
 17. Anon-volatile storage apparatus, comprising: a plurality of non-volatilestorage elements arranged into groups of connected non-volatile storageelements; a plurality of bit lines, each of the bit lines are connectedto multiple groups in a same block; a plurality of word lines, each ofthe word lines are connected to multiple groups; one or more managingcircuits in communication with the non-volatile storage elements via thebit lines and word lines, the one or more managing circuits areconfigured to select one group for each bit line, the one or moremanaging circuits are configured to apply an unselected voltage tounselected word lines, the one or more managing circuits are configuredto maintain at a first fixed potential channels of non-volatile storageelements that are connected to word lines on a drain side of a selectedword line and that are in unselected groups, the one or more managingcircuits are configured to apply a read compare voltage to the selectedword line and sense non-volatile storage elements connected to theselected word line that are in selected groups; and one source sideselect signal line and two drain side select signal lines connected tothe groups, the one or more managing circuits turn off the two drainside select signal lines and turn on the source side select signal lineto allow the first fixed potential to be pre-charged.
 18. Thenon-volatile storage apparatus of claim 17, wherein: plurality ofnon-volatile storage elements arranged in a three dimensional memorystructure.
 19. A method of reading non-volatile storage, comprising:electrically selecting one NAND string for each of a plurality of bitlines of a system where multiple NAND strings in a common block areconnected to each bit line of the plurality of bit lines, the NANDstrings have channels, each NAND string has a drain side select gate;applying an unselected voltage to unselected word lines; maintaining, atone or more fixed potentials, channels of memory cells that are onunselected NAND strings and that are connected to word lines on a drainside of a selected word line by using a respective drain side selectgate to apply a respective voltage from a respective bit line to thechannels; and applying a read compare voltage to the selected word lineand sensing non-volatile storage elements connected to the selected wordline.
 20. A method of reading non-volatile storage, comprising:electrically selecting one NAND string for each of a plurality of bitlines of a system where multiple NAND strings in a common block areconnected to each bit line of the plurality of bit lines, the NANDstrings have channels; applying an unselected voltage to unselected wordlines; applying a source voltage via a common source connection for NANDstrings of the common block in order to apply the source voltage toportions of channels of unselected NAND strings that are on a sourceside of a selected word line; applying non-zero bit line voltages to theplurality of bit lines in order to apply the non-zero bit line voltagesto portions of channels of unselected NAND strings that are on a drainside of a selected word line; and applying a read compare voltage to aselected word line and sensing non-volatile storage elements connectedto the selected word line.
 21. A non-volatile storage apparatus,comprising: a plurality of non-volatile storage elements arranged intogroups of connected non-volatile storage elements in a common block thathave a common source connection; a plurality of bit lines, each of thebit lines are connected to multiple groups; a plurality of word lines,each of the word lines are connected to multiple groups; and one or moremanaging circuits in communication with the non-volatile storageelements via the bit lines and word lines, the one or more managingcircuits are configured to select one group for each of the bit lines,the one or more managing circuits are configured to apply an unselectedvoltage to unselected word lines, the one or more managing circuits areconfigured to apply a read compare voltage to the selected word line andsense non-volatile storage elements connected to the selected word linethat are in selected groups, the one or more managing circuits areconfigured to apply a source voltage via the common source connection inorder to apply the source voltage to portions of channels of unselectedgroups that are on a source side of a selected word line, the one ormore managing circuits are configured to apply non-zero bit linevoltages to one or more of the bit lines in order to apply the non-zerobit line voltages to portions of channels of unselected groups that areon a drain side of a selected word line.
 22. The non-volatile storageapparatus of claim 21, wherein: plurality of non-volatile storageelements arranged in a three dimensional memory structure.